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| Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm s Features q q 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 1.90.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 +0.2 3 0.4 -0.05 +0.1 2 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -15 -10 -7 -1 - 0.5 200 150 -55 ~ +150 Unit V V V A A mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1R s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -10V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -0.4A, IB = -8mA IC = -0.4A, IB = -8mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -15 -10 -7 130 60 - 0.16 - 0.8 130 22 *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 max -100 0.16 -0.06 +0.2 +0.1 s Absolute Maximum Ratings (Ta=25C) 1.45 Unit nA V V V 350 - 0.3 -1.2 V V MHz pF Pulse measurement *1h FE1 Rank classification Rank hFE1 R 130 ~ 220 1RR S 180 ~ 350 1RS Marking Symbol 1 Transistor PC -- Ta 240 -1.2 Ta=25C 200 -1.0 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 2SB970 IC -- VCE -100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=50 Collector power dissipation PC (mW) -30 -10 -3 25C -1 Ta=-25C 75C 160 120 Collector current IC (A) - 0.8 - 0.6 80 - 0.4 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 40 - 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 IC/IB=50 600 hFE -- IC 200 VCE=-2V 180 500 fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 160 140 120 100 80 60 40 20 400 Ta=75C 25C -25C 300 - 0.3 - 0.1 - 0.03 Ta=75C 25C -25C 200 100 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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